Mosfet

MOSFETNTD5806N Power MOSFET
Features

40 V, 33 A, Single N−Channel, DPAK/IPAK
• • • •
Low RDS(on) High Current Capability Avalanche Energy Specified These are Pb−Free Devices

http://onsemi.com
V(BR)DSS 40 V RDS(on) MAX 26 mW @ 4.5 V 19 mW @ 10 V D ID MAX 33 A

Applications

• CCFL Backlight • DC Motor Control • Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS) Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) Pulsed Drain Current TC = 25°C Steady State TC = 100°C TC = 25°C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS VGS ID Value 40 "20 "30 33 23 40 67 −55 to 175 33 39 W A °C A mJ Unit V V V A

G S N−CHANNEL MOSFET 4 4 1 2

tp = 10 ms

3

1

Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 28 A, L = 0.1 mH, VDS = 40 V) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

DPAK CASE 369C (Surface Mount) STYLE 2

3 IPAK CASE 369D (Straight Lead DPAK)

2

TL

260

°C

MARKING DIAGRAMS & PIN ASSIGNMENT
4 Drain YWW 58 06NG 4 Drain YWW 58 06NG 1 2 3 Gate Drain Source = Year = Work Week = Device Code = Pb−Free Package Publication Order Number: NTD5806N/D

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Junction−to−Case (Drain) Junction−to−Ambient − Steady State (Note 1) Symbol RqJC RqJA Value 3.7 57.5 Unit °C/W

2 1 Drain 3 Gate Source

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including