Datasheet bc548

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION .
B

BC546/7/8
EPITAXIAL PLANAR NPN TRANSISTOR

C

High Voltage : BC546 VCEO=65V. For Complementary With PNP Type BC556/557/558.
K D E G N

A

FEATURES

MAXIMUM RATING (Ta=25
CHARACTERISTIC

)
SYMBOL RATING 80
M

UNIT

H F F

BC546 Collector-Base Voltage BC547 BC548 BC546 Collector-Emitter Voltage BC547 BC548 BC546 Emitter-Base Voltage BC547 BC548 BC546 Collector Current BC547 BC548 BC546 Emitter Current BC547 BC548 Collector Power Dissipation Junction Temperature Storage Temperature Range PC Tj Tstg IE IC VEBO VCEO VCBO

30 65 45 30 6 6 5 100 100 100 -100 -100 -100 625 150 -55 150 mW mA mA V V

L

50

V

1

2

3

C

DIM A B C D E F G H J K L M N

MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00

J

1. COLLECTOR 2. BASE 3. EMITTER

TO-92

1998. 10. 8

Revision No : 3

1/3

BC546/7/8
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut-off Current BC546 DC Current Gain (Note) BC547 BC548 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Noise Figure VCE(sat) VBE(sat) VBE(ON)1 VBE(ON)2 fT Cob NF IC=100mA, IB=5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=10mA, f=100MHz VCB=10V, f=1MHz, IE=0 VCE=6V, IC=0.1mA Rg=10k , f=1kHz hFE VCE=5V, IC=2mA SYMBOL ICBO TEST CONDITION VCB=30V, IE=0 MIN. 110 110 110 0.58 TYP. 0.9 150 1.0 MAX. 15 450 800 800 0.6 1.1 0.7 0.75 4.5 10 V V V V MHz pF dB UNIT nA

NOTE : According to the value of hFE the BC546, BC547, BC548 are classified as follows. CLASSIFICATION BC546 hFE BC547 BC548 none 110 110 110 450 800 800 A 110 220 110 220 110 220 B 200 450 200 450 200 450 C 420 800 420 800

1998. 10. 8

Revision No : 3

2/3

BC546/7/8

I C - VCE (LOW VOLTAGE REGION)
240 COLLECTOR CURRENT I C (mA) 200 160
1.0 6.0 5.0 3.0 COMMON EMITTER Ta=25 C 2.0

h FE - I C
1k DC CURRENT GAIN h FE 500 300