Datasheet

BC548 / BC548A / BC548B / BC548C

BC548 BC548A BC548B BC548C

E

B

TO-92
C

NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

Absolute Maximum Ratings*
Symbol
VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25°C unless otherwise noted

Parameter

Value
30 30 5.0 500 -55 to +150

Units
V V V mA °C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RθJC RθJA

TA = 25°C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max
BC548 / A / B / C 625 5.0 83.3 200

Units mW mW/°C °C/W °C/W

© 1997 Fairchild Semiconductor Corporation

548-ABC, Rev B

BC548 / BC548A / BC548B / BC548C

NPN General Purpose Amplifier
(continued)

Electrical Characteristics
Symbol Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA, IB = 0 IC = 10 µA, IE = 0 IC = 10 µA, IE = 0 IE = 10 µA, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = +150 °C 30 30 30 5.0 15 5.0 V V V V nA µA

ON CHARACTERISTICS hFE DC Current Gain VCE = 5.0 V, IC = 2.0 mA 548 548A 548B 548C 110 110 200