Eletrica

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors

Order this document by BC546/D

NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER

BC546, B BC547, A, B, C BC548, A, B, C

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 546 65 80 BC 547 45 50 6.0 100 625 5.0 1.5 12 – 55 to +150 BC 548 30 30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C

1 2 3

CASE 29–04, STYLE 17 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc) Emitter – Base Breakdown Voltage (IE = 10 mA, IC = 0) Collector Cutoff Current (VCE = 70 V, VBE = 0) (VCE = 50 V, VBE = 0) (VCE = 35 V, VBE = 0) (VCE = 30 V, TA = 125°C) BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 BC546/547/548 V(BR)CEO 65 45 30 80 50 30 6.0 6.0 6.0 — — — — — — — — — — — — — 0.2 0.2 0.2 — — — — — — — — — — 15 15 15 4.0 V

V(BR)CBO

V

V(BR)EBO

V

ICES nA

µA

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996

1

BC546, B BC547, A, B, C BC548, A, B, C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 10 µA, VCE = 5.0 V) hFE BC547A/548A BC546B/547B/548B BC548C BC546 BC547 BC548 BC547A/548A BC546B/547B/548B BC547C/BC548C BC547A/548A BC546B/547B/548B BC548C VCE(sat) — — — VBE(sat)