Eng. producao

Data Sheet No. PD60026-R

IR2112(S) & (PbF)
HIGH AND LOW SIDE DRIVER
Features
• Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • 3.3V logic compatible • • • • •
Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset CMOS Schmitt-triggered inputs with pull-down Cycle by cycle edge-triggered shutdown logic Matched propagation delay for both channels Outputs in phase with inputs Also available LEAD-FREE dV/dt immune

Product Summary
VOFFSET IO+/VOUT ton/off (typ.) Delay Matching 600V max. 200 mA / 420 mA 10 - 20V 125 & 105 ns 30 ns

Packages

Description
The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and 16-Lead SOIC low side referenced output channels. Proprietary HVIC (wide body) 14-Lead PDIP and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver crossconduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Typical Connection
HO VDD HIN SD LIN VSS VCC VDD HIN SD LIN VSS VCC COM LO VB VS

up to 600V

TO LOAD

(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.

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IR2112(S) & (PbF)

Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance