Datasheet mmbth10

MMBTH10LT1, MMBTH10−4LT1
Preferred Devices

VHF/UHF Transistor
NPN Silicon
• Device Marking: 3EM
Device Marking:
Features http://onsemi.com

• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1 BASE

COLLECTOR 3

MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO VCBO VEBO Value 25 30 3.0 Unit Vdc Vdc Vdc
3

2 EMITTER

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2) Junction and Storage Temperature Range Symbol PD 225 1.8 RθJA PD 300 2.4 RθJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit
1 2

CASE 318 SOT−23 STYLE 6

ORDERING INFORMATION
Device MMBTH10LT1 MMBTH10LT1G MMBTH10−4LT1 Package SOT−23 SOT−23 (Pb−Free) SOT−23 Shipping† 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel

1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Preferred devices are recommended choices for future use and best overall value.

© Semiconductor Components Industries, LLC, 2003

1

December, 2003 − Rev. 2

Publication Order Number: MMBTH10LT1/D

MMBTH10LT1, MMBTH10−4LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter−Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc)