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Final dataSPP11N60C2, SPB11N60C2 SPA11N60C2
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances
P-TO220-3-31
Product Summary VDS @ Tjmax 650 R DS(on) ID
P-TO263-3-2
V Ω A
0.38 11
P-TO220-3-1
1 P-TO220-3-31
2
3
Type SPP11N60C2 SPB11N60C2 SPA11N60C2
Package P-TO220-3-1 P-TO263-3-2
Ordering Code Q67040-S4295 Q67040-S4298
Marking 11N60C2 11N60C2 11N60C2
P-TO220-3-31 Q67040-S4332
Maximum Ratings Parameter Symbol ID Value SPP_B SPA Unit
Continuous drain current
TC = 25 °C TC = 100 °C
A 11 7 111) 71) 22 340 0.6 11 6 ±20
±30
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID =5.5A, VDD =50V
ID puls EAS EAR IAR
22 340 0.6 11 6 ±20
±30
A mJ
Avalanche energy, repetitive tAR limited by Tjmax 2)
ID =11A, VDD =50V
Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt
IS = 11 A, VDS < VDD , di/dt=100A/µs, Tjmax =150°C
A V/ns V W
dv/dt
VGS VGS Ptot
Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C
125
33
Operating and storage temperature
Page 1
Tj , Tstg
-55...+150
°C
2002-08-12
Final data Thermal Characteristics Parameter Characteristics
SPP11N60C2, SPB11N60C2 SPA11N60C2
Symbol min.
Values typ. max.
Unit
Thermal resistance, junction - case Thremal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Linear derating factor Linear derating factor, FullPAK Soldering temperature, 1.6 mm (0.063 in.) from case for 10s
RthJC RthJC_FP RthJA RthJA_FP RthJA
-
35 -
1 3.8 62 80 62 1 0.26 260
K/W
W/K °C
Tsold
-
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Static